Tunneling transport in open nitride resonant tunneling structures taking into account the acoustic phonons: An variational approach

Quantum-mechanical theory of tunneling transport through open nanostructures based on nitride semiconductors, taking into account the contribution of acoustic phonons, is proposed. A variational method taking into account the component of Hamiltonian due to the deformation potential of acoustic phonons at different temperatures is developed. On the basis of the developed theory the transmission coefficient of a two-barrier AlN/GaN resonant tunneling nanostructure, its electronic conductivity and tunneling current are calculated taking into account the impact of acoustic phonons. It was found that with the increase of temperature values the frequencies of quantum transitions between electronic quasistationary states increase, an increase in temperature from cryogenic to room values results in a shift of the tunneling current peak and a decrease in the maximum value of dynamic conductivity in almost seven times. [Display omitted] •Variational method for the Schrödinger equation in opened nanostructures.•Quasi-stationary states of electrons together with a subsystem of acoustic phonons.•Electronic tunneling transport taking into account the impact of acoustic phonons.