Broadband Visible−Near Infrared Two‐Dimensional WSe2/In2Se3 Photodetector for Underwater Optical Communications

P–n junctions based on 2D materials can be achieved using a selective doping technique, while such a method is challenged by the complex fabrication process. Here, a facile van der Waals (vdWs) structured p–n heterojunction is demonstrated by simply transferring an n‐type multilayer α‐In2Se3 (direct...

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Veröffentlicht in:Advanced optical materials 2022-06, Vol.10 (12), p.n/a
Hauptverfasser: Zou, Jihua, Ke, Yizhen, Zhou, Xiangyu, Huang, Yixuan, Du, Wen, Lin, Lin, Wei, Shunyong, Luo, Lingzhi, Liu, Hezhuang, Li, Chuanlin, Shen, Kai, Ren, Aobo, Wu, Jiang
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Sprache:eng
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Zusammenfassung:P–n junctions based on 2D materials can be achieved using a selective doping technique, while such a method is challenged by the complex fabrication process. Here, a facile van der Waals (vdWs) structured p–n heterojunction is demonstrated by simply transferring an n‐type multilayer α‐In2Se3 (direct bandgap) on a p‐type ultra‐thin WSe2 nanosheet. The vdWs stacked photodetector with an improved type‐II band alignment not only realizes a broadband spectral response from visible to near infrared (405–905 nm), but also operates well with a diode‐like behavior. This behavior is further confirmed by the high‐resolution scanning photocurrent mapping. As a result, the as‐fabricated device exhibits a short response time (
ISSN:2195-1071
2195-1071
DOI:10.1002/adom.202200143