Broadband Visible−Near Infrared Two‐Dimensional WSe2/In2Se3 Photodetector for Underwater Optical Communications
P–n junctions based on 2D materials can be achieved using a selective doping technique, while such a method is challenged by the complex fabrication process. Here, a facile van der Waals (vdWs) structured p–n heterojunction is demonstrated by simply transferring an n‐type multilayer α‐In2Se3 (direct...
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Veröffentlicht in: | Advanced optical materials 2022-06, Vol.10 (12), p.n/a |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | P–n junctions based on 2D materials can be achieved using a selective doping technique, while such a method is challenged by the complex fabrication process. Here, a facile van der Waals (vdWs) structured p–n heterojunction is demonstrated by simply transferring an n‐type multilayer α‐In2Se3 (direct bandgap) on a p‐type ultra‐thin WSe2 nanosheet. The vdWs stacked photodetector with an improved type‐II band alignment not only realizes a broadband spectral response from visible to near infrared (405–905 nm), but also operates well with a diode‐like behavior. This behavior is further confirmed by the high‐resolution scanning photocurrent mapping. As a result, the as‐fabricated device exhibits a short response time ( |
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ISSN: | 2195-1071 2195-1071 |
DOI: | 10.1002/adom.202200143 |