High Power Distributed Bragg Reflector Lasers at 689.45 nm for Quantum Technology Applications

Distributed Bragg Reflector semiconductor lasers are ideally suited for quantum technology applications due to their high efficiency, small footprint, and tunability in combination with the frequency stability provided by an integrated frequency selective element. Here we present the design, fabrication, and electro-optical characterization of DBR lasers optimized for strontium-based quantum technology applications at 689.449 nm. The devices achieved an optical output power of up to 88 mW, four times more than previously reported, as well as a spectral linewidth of 0.4 MHz.