Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature

The effect of annealing on the parameters of 4 H -SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV, irradiation is carried out at temperatures of 23, 300, and 500°C with fluences Φ in the 1 × 10 16 –1.3 × 10 17 cm –2 ra...

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