Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature

The effect of annealing on the parameters of 4 H -SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV, irradiation is carried out at temperatures of 23, 300, and 500°C with fluences Φ in the 1 × 10 16 –1.3 × 10 17 cm –2 range. The results of annealing samples irradiated at high temperatures differ qualitatively from the results of annealing samples irradiated with the same fluence at room temperature. The results indicate that, under high-temperature (“hot”) irradiation, the spectrum of radiation-induced defects introduced in SiC differs significantly from the spectrum of defects introduced at room temperature. The effect of reverse annealing, when the resistance of the base of the diode does not fall but increases as a result of annealing, was discovered for large values of Φ at irradiation temperatures of 300 and 500°C.