Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
The effect of annealing on the parameters of 4 H -SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV, irradiation is carried out at temperatures of 23, 300, and 500°C with fluences Φ in the 1 × 10 16 –1.3 × 10 17 cm –2 ra...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2022-03, Vol.56 (3), p.189-194 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Lebedev, A. A. Kozlovski, V. V. Levinshtein, M. E. Malevsky, D. A. Oganesyan, G. A. Strel’chuk, A. M. Davydovskaya, K. S. |
| description | The effect of annealing on the parameters of 4
H
-SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV, irradiation is carried out at temperatures of 23, 300, and 500°C with fluences Φ in the 1 × 10
16
–1.3 × 10
17
cm
–2
range. The results of annealing samples irradiated at high temperatures differ qualitatively from the results of annealing samples irradiated with the same fluence at room temperature. The results indicate that, under high-temperature (“hot”) irradiation, the spectrum of radiation-induced defects introduced in SiC differs significantly from the spectrum of defects introduced at room temperature. The effect of reverse annealing, when the resistance of the base of the diode does not fall but increases as a result of annealing, was discovered for large values of Φ at irradiation temperatures of 300 and 500°C. |
| doi_str_mv | 10.1134/S1063782622020099 |
| format | Article |
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H
-SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV, irradiation is carried out at temperatures of 23, 300, and 500°C with fluences Φ in the 1 × 10
16
–1.3 × 10
17
cm
–2
range. The results of annealing samples irradiated at high temperatures differ qualitatively from the results of annealing samples irradiated with the same fluence at room temperature. The results indicate that, under high-temperature (“hot”) irradiation, the spectrum of radiation-induced defects introduced in SiC differs significantly from the spectrum of defects introduced at room temperature. The effect of reverse annealing, when the resistance of the base of the diode does not fall but increases as a result of annealing, was discovered for large values of Φ at irradiation temperatures of 300 and 500°C.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782622020099</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Annealing ; Defect annealing ; Electron energy ; Electrons ; Fluence ; High temperature ; Magnetic Materials ; Magnetism ; Nuclear energy ; Physics ; Physics and Astronomy ; Radiation ; Radiation effects ; Room temperature ; Schottky diodes ; Silicon carbide</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2022-03, Vol.56 (3), p.189-194</ispartof><rights>Pleiades Publishing, Ltd. 2022. ISSN 1063-7826, Semiconductors, 2022, Vol. 56, No. 3, pp. 189–194. © Pleiades Publishing, Ltd., 2022. ISSN 1063-7826, Semiconductors, 2022. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 4, pp. 441–445.</rights><rights>COPYRIGHT 2022 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2229-f9cc7f9ddbc533259367eb9aceed651b78f044827d854e4e2be18d3bfc3844b43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782622020099$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782622020099$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Lebedev, A. A.</creatorcontrib><creatorcontrib>Kozlovski, V. V.</creatorcontrib><creatorcontrib>Levinshtein, M. E.</creatorcontrib><creatorcontrib>Malevsky, D. A.</creatorcontrib><creatorcontrib>Oganesyan, G. A.</creatorcontrib><creatorcontrib>Strel’chuk, A. M.</creatorcontrib><creatorcontrib>Davydovskaya, K. S.</creatorcontrib><title>Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The effect of annealing on the parameters of 4
H
-SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV, irradiation is carried out at temperatures of 23, 300, and 500°C with fluences Φ in the 1 × 10
16
–1.3 × 10
17
cm
–2
range. The results of annealing samples irradiated at high temperatures differ qualitatively from the results of annealing samples irradiated with the same fluence at room temperature. The results indicate that, under high-temperature (“hot”) irradiation, the spectrum of radiation-induced defects introduced in SiC differs significantly from the spectrum of defects introduced at room temperature. The effect of reverse annealing, when the resistance of the base of the diode does not fall but increases as a result of annealing, was discovered for large values of Φ at irradiation temperatures of 300 and 500°C.</description><subject>Annealing</subject><subject>Defect annealing</subject><subject>Electron energy</subject><subject>Electrons</subject><subject>Fluence</subject><subject>High temperature</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Nuclear energy</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Radiation</subject><subject>Radiation effects</subject><subject>Room temperature</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kE1PwzAMhisEEmPwA7hF4tyRrzXNcRqDTZrEYYMbqtLE7TK6ZiSZ0P49LUPigJAPtuz3eW05SW4JHhHC-P2K4IyJnGaUYoqxlGfJgGCJ04wLed7XGUv7-WVyFcIWY0LyMR8kb5O2BdXYtkZzW2_SV9dEVQPi83Rlp2ilNy7G9yN6sM5AQAvvlbEqgkGfNm7QrAEdvWsDUhGpbwu0ht0evIoHD9fJRaWaADc_eZi8PM7W03m6fH5aTCfLVFNKZVpJrUUljSn1mDE6liwTUEqlAUw2JqXIK8x5ToXpbgYOtASSG1ZWmuWcl5wNk7uT7967jwOEWGzdwbfdyoJmQmSMENyrRidVrRoobFu56JXuwsDOatdCZbv-RGDBCcV53gHkBGjvQvBQFXtvd8ofC4KL_u3Fn7d3DD0xodO2NfjfU_6HvgCsiYLG</recordid><startdate>20220301</startdate><enddate>20220301</enddate><creator>Lebedev, A. A.</creator><creator>Kozlovski, V. V.</creator><creator>Levinshtein, M. E.</creator><creator>Malevsky, D. A.</creator><creator>Oganesyan, G. A.</creator><creator>Strel’chuk, A. M.</creator><creator>Davydovskaya, K. S.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20220301</creationdate><title>Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature</title><author>Lebedev, A. A. ; Kozlovski, V. V. ; Levinshtein, M. E. ; Malevsky, D. A. ; Oganesyan, G. A. ; Strel’chuk, A. M. ; Davydovskaya, K. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2229-f9cc7f9ddbc533259367eb9aceed651b78f044827d854e4e2be18d3bfc3844b43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Defect annealing</topic><topic>Electron energy</topic><topic>Electrons</topic><topic>Fluence</topic><topic>High temperature</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Nuclear energy</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Radiation</topic><topic>Radiation effects</topic><topic>Room temperature</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lebedev, A. A.</creatorcontrib><creatorcontrib>Kozlovski, V. V.</creatorcontrib><creatorcontrib>Levinshtein, M. E.</creatorcontrib><creatorcontrib>Malevsky, D. A.</creatorcontrib><creatorcontrib>Oganesyan, G. A.</creatorcontrib><creatorcontrib>Strel’chuk, A. M.</creatorcontrib><creatorcontrib>Davydovskaya, K. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lebedev, A. A.</au><au>Kozlovski, V. V.</au><au>Levinshtein, M. E.</au><au>Malevsky, D. A.</au><au>Oganesyan, G. A.</au><au>Strel’chuk, A. M.</au><au>Davydovskaya, K. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2022-03-01</date><risdate>2022</risdate><volume>56</volume><issue>3</issue><spage>189</spage><epage>194</epage><pages>189-194</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The effect of annealing on the parameters of 4
H
-SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV, irradiation is carried out at temperatures of 23, 300, and 500°C with fluences Φ in the 1 × 10
16
–1.3 × 10
17
cm
–2
range. The results of annealing samples irradiated at high temperatures differ qualitatively from the results of annealing samples irradiated with the same fluence at room temperature. The results indicate that, under high-temperature (“hot”) irradiation, the spectrum of radiation-induced defects introduced in SiC differs significantly from the spectrum of defects introduced at room temperature. The effect of reverse annealing, when the resistance of the base of the diode does not fall but increases as a result of annealing, was discovered for large values of Φ at irradiation temperatures of 300 and 500°C.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782622020099</doi><tpages>6</tpages></addata></record> |
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| subjects | Annealing Defect annealing Electron energy Electrons Fluence High temperature Magnetic Materials Magnetism Nuclear energy Physics Physics and Astronomy Radiation Radiation effects Room temperature Schottky diodes Silicon carbide |
| title | Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature |
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