High aspect (>20) etching with reactive gas cluster injection
The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF 3 –Ar gas cluster injection were investigat...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2022-07, Vol.61 (SI), p.SI1007 |
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| container_issue | SI |
| container_start_page | SI1007 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 61 |
| creator | Seki, Toshio Yamamoto, Hiroki Koike, Kunihiko Aoki, Takaaki Matsuo, Jiro |
| description | The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF
3
–Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of the aspect ratio was derived from the ClF
3
flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, the 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching. |
| doi_str_mv | 10.35848/1347-4065/ac6565 |
| format | Article |
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3
–Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of the aspect ratio was derived from the ClF
3
flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, the 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac6565</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Aspect ratio ; ClF3 ; Clusters ; Etching ; high aspect etching ; Ion beams ; Ion irradiation ; neutral cluster ; Radiation damage ; Ultraviolet radiation</subject><ispartof>Japanese Journal of Applied Physics, 2022-07, Vol.61 (SI), p.SI1007</ispartof><rights>2022 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c297t-b6395100bf91aba799b05df2cdaef9399c28d5e06b1380bafc3b044f91bec6603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac6565/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53824,53871</link.rule.ids></links><search><creatorcontrib>Seki, Toshio</creatorcontrib><creatorcontrib>Yamamoto, Hiroki</creatorcontrib><creatorcontrib>Koike, Kunihiko</creatorcontrib><creatorcontrib>Aoki, Takaaki</creatorcontrib><creatorcontrib>Matsuo, Jiro</creatorcontrib><title>High aspect (>20) etching with reactive gas cluster injection</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF
3
–Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of the aspect ratio was derived from the ClF
3
flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, the 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching.</description><subject>Aspect ratio</subject><subject>ClF3</subject><subject>Clusters</subject><subject>Etching</subject><subject>high aspect etching</subject><subject>Ion beams</subject><subject>Ion irradiation</subject><subject>neutral cluster</subject><subject>Radiation damage</subject><subject>Ultraviolet radiation</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQxYMoWKsfwFvAiz2szZ9NdnNQkKK2UPCgnkOSzbZZ6u6apBa_vakrelEYGGb4vTfDA-AcoyvKyrycYpoXWY44myrDGWcHYPSzOgQjhAjOckHIMTgJoUkjZzkegeu5W62hCr01EV7eEDSBNpq1a1dw5-IaeqtMdO8WrlSAZrMN0Xro2ibhrmtPwVGtNsGeffcxeLm_e57Ns-Xjw2J2u8wMEUXMNKeCYYR0LbDSqhBCI1bVxFTK1oIKYUhZMYu4xrREWtWGapTnidbWcI7oGFwMvr3v3rY2RNl0W9-mk5LwgmMqOC8ThQfK-C4Eb2vZe_eq_IfESH6lJPeRyH0kckgpaSaDxnX9r2nTqF5yLJ8WqdLjheyrOrHZH-z_3p-oWHUc</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Seki, Toshio</creator><creator>Yamamoto, Hiroki</creator><creator>Koike, Kunihiko</creator><creator>Aoki, Takaaki</creator><creator>Matsuo, Jiro</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20220701</creationdate><title>High aspect (>20) etching with reactive gas cluster injection</title><author>Seki, Toshio ; Yamamoto, Hiroki ; Koike, Kunihiko ; Aoki, Takaaki ; Matsuo, Jiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c297t-b6395100bf91aba799b05df2cdaef9399c28d5e06b1380bafc3b044f91bec6603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aspect ratio</topic><topic>ClF3</topic><topic>Clusters</topic><topic>Etching</topic><topic>high aspect etching</topic><topic>Ion beams</topic><topic>Ion irradiation</topic><topic>neutral cluster</topic><topic>Radiation damage</topic><topic>Ultraviolet radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seki, Toshio</creatorcontrib><creatorcontrib>Yamamoto, Hiroki</creatorcontrib><creatorcontrib>Koike, Kunihiko</creatorcontrib><creatorcontrib>Aoki, Takaaki</creatorcontrib><creatorcontrib>Matsuo, Jiro</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seki, Toshio</au><au>Yamamoto, Hiroki</au><au>Koike, Kunihiko</au><au>Aoki, Takaaki</au><au>Matsuo, Jiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High aspect (>20) etching with reactive gas cluster injection</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2022-07-01</date><risdate>2022</risdate><volume>61</volume><issue>SI</issue><spage>SI1007</spage><pages>SI1007-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF
3
–Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of the aspect ratio was derived from the ClF
3
flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, the 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac6565</doi><tpages>8</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2022-07, Vol.61 (SI), p.SI1007 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Aspect ratio ClF3 Clusters Etching high aspect etching Ion beams Ion irradiation neutral cluster Radiation damage Ultraviolet radiation |
| title | High aspect (>20) etching with reactive gas cluster injection |
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