High aspect (>20) etching with reactive gas cluster injection

The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF 3 –Ar gas cluster injection were investigat...

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Veröffentlicht in:Japanese Journal of Applied Physics 2022-07, Vol.61 (SI), p.SI1007
Hauptverfasser: Seki, Toshio, Yamamoto, Hiroki, Koike, Kunihiko, Aoki, Takaaki, Matsuo, Jiro
Format: Artikel
Sprache:eng
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Zusammenfassung:The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF 3 –Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of the aspect ratio was derived from the ClF 3 flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, the 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac6565