Ultrasensitive V doped WO3 1D nanorods heterojunction photodetector with pronounced photosensing activities

In this study, vanadium-doped tungsten oxide (V-WO3) nanorods heterostructures are designed by a simple, facile, and eco-friendly hydrothermal method and applied for photo-sensing activities. Physical characterization results indicate the phase purity, crystalline nature, tuneable energy bandgap, higher surface area, and successful formation of V doped WO3 nanorods. Optoelectronic properties reveal pronounced photo-sensing capabilities of the designed material demonstrating efficient charge transfer. The photocurrent density is enhanced with laser power. Large values of open-circuit voltage (Voc) and short-circuit current (Isc) in the range of 0.91 V and 28 mA/cm2, respectively, are obtained at 56 mW/cm2 power. The Isc is enhanced considerably as a function of power intensity of laser due to the formation of large number of photo-induced electron-hole pairs and large value of built-in potential. Furthermore, to estimate the response time of the device, the measured temporal photoresponse is 4500 A/W, several-fold higher than previously reported materials, associated with suppression in the dark current. In addition, the detectivity of V doped WO3 NRs photodetector lies in the range of 5.15×1011 Jones and the calculated value of detectivity and EQE is ~70%. These results are interesting and provide a roadmap to design ultrasensitive photodetectors. •V doped WO3 1D Nanorods Heterojunction was formed by simple, facile and eco-friendly hydrothermal method.•Heterojunction formation, higher surface area and tuneable energy bandgap make them suitable and effective for photosensing.•Profound photosensing activities due to greater charge transfer.•Higher temporal photoresponse, detectivity and EQE value as compared to previous reported materials.