Thickness dependent resistive switching behaviors in Ta2O5 layer at low temperature: Towards flexible, invisible, cryo-electronic applications in aerospace

The role of Ta2O5 resistive switching (RS) layer thickness on transparent resistive random-access memories (TRRAMs) is systematically investigated. Ta2O5 TRRAMs (t-TRRAMs) exhibits not only high optical transmittance (82%) in the visible region but also bipolar resistive switching behavior with RON/ROFF ratio of ≈103, SET voltage of (0.37 ± 0.08)V, RESET voltage of -(2.83 ± 0.42)V, good endurance of ≈103 cycles and retention over 104s at room temperature (RT) as well as 80 °C. The temperature-dependent RS properties for t-TRRAMs are experimentally validated from low temperature (150 K) to elevated temperature (333 K). Furthermore, t-TRRAMs are implemented on ITO-coated flexible polyethylene terephthalate (PET) substrates. The flexible t-TRRAMs demonstrate RON/ROFF ratio of ≈102, reasonable endurance of ≈500 cycles, and retention over 104s at RT. The experimental results indicate that t-TRRAMs can be a potential candidate for flexible, invisible, cryo-electronic applications.