Optimization of inversion mode and junctionless nanowire MOSFET for improved sensitivity to process induced variability

With the scaling of MOSFET devices, study of process variations on the electrical performance of the device has become more important. Also, there is a need to reduce this process induced variability as this can further lead to instability in circuit performance of the device. This paper presents assessment and optimization of process induced variability in Inversion mode and Junctionless Nanowire MOSFET. Process parameters such as channel length, nanowire radius, oxide thickness, and channel doping are considered to estimate the performance degradation. Among all process parameters, nanowire radius results in maximum variability and oxide thickness results in minimum variability for both the devices. Junctionless Nanowire MOSFET has shown more sensitivity to threshold voltage variability as compared to conventional type. Also, using high-k dielectric, device can be optimized to have better sensitivity against process variations.