Low temperature epitaxy of tensile-strained Si:P

•550 °C epitaxy of tensile SiP. with disilane and phosphine.•Various strategies evaluated to obtain low resistivities and high [P]subst.•High phosphine to disilane mass-flow, low H2 carrier flow and high pressure.•Smooth and uniform t-Si:P layers with a substitutional P concentration of 6.3%.•Electr...

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Veröffentlicht in:	Journal of crystal growth 2022-03, Vol.582, p.126543, Article 126543
Hauptverfasser:	Hartmann, J.M., Kanyandekwe, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystal morphology A1. Doping A1. Stresses A3. Chemical vapor deposition processes B1. Germanium silicon alloys B3. Field effect transistors Deposition Field effect transistors Haze Low temperature Mass flow Selectivity Semiconductor devices Tensile strain
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