Research Progress in Sintering-bonding with Nanoparticle Materials as Interlayer and Its Packaging Application

With the development of third-generation power semiconductor devices, the wide bandgap semiconductor chips represented by SiC are playing an increasingly important role in high-power power electronic devices. However, the packaging materials matched with traditional Si chips cannot meet their high-t...

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Veröffentlicht in:Ji xie gong cheng xue bao 2022-01, Vol.58 (2), p.2
Hauptverfasser: Jia, Qiang, Zou, Guisheng, Zhang, Hongqiang, Wang, Wengan, Deng, Zhongyang, Ren, Hui, Liu, Lei, Peng, Peng, Guo, Wei
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Sprache:chi
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Zusammenfassung:With the development of third-generation power semiconductor devices, the wide bandgap semiconductor chips represented by SiC are playing an increasingly important role in high-power power electronic devices. However, the packaging materials matched with traditional Si chips cannot meet their high-temperature service requirements and become a shortcoming in the application of power electronic devices. Nanoparticle materials used as an interlayer for electronic packaging can achieve low-temperature bonding and high-temperature service, which is a current research hotspot of packaging materials. This paper reviews the types of nanoparticle materials as the interlayer, focusing on the analysis of the advantages, influencing factors and limitations of nanoparticle of elementary substance for sintering-bonding, and systematically expounds the latest progress and development trend of composite nanoparticle for sintering-bonding, aiming to promote the application of nanoparticle material as an interlayer for electro
ISSN:0577-6686