Development of dislocation-free ion-doped silicon layers

Development of dislocation-free ion-doped silicon layers

Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a threshold dose and annihilation of point defects on substitutional impurities. Implantation conditions are determined under which dislocation-free io...

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Veröffentlicht in:Physics of the solid state 2008, Vol.50 (8), p.1433-1437
Hauptverfasser: Plebanovich, V. I., Belous, A. I., Chelyadinskiĭ, A. R., Odzhaev, V. B.
Format: Artikel
Sprache:eng
Schlagworte:
Defects and Impurity Centers
Dislocations
Physics
Physics and Astronomy
Physics of Strength
Point defects
Silicon
Solid State Physics
Substitutional impurities
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Beschreibung
Zusammenfassung:Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a threshold dose and annihilation of point defects on substitutional impurities. Implantation conditions are determined under which dislocation-free ion-doped silicon layers are formed.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783408080088