Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/GaxIn1 − xAsyP1 − y/GaInP/GaAs(001) heterostructures

Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/GaxIn1 − xAsyP1 − y/GaInP/GaAs(001) heterostructures

Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga x In 1 − x As y P 1 − y quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008, Vol.42 (9), p.1069-1075
Hauptverfasser: Domashevskaya, E. P., Gordienko, N. N., Rumyantseva, N. A., Agapov, B. L., Seredin, P. V., Bityutskaya, L. A., Arsent’ev, I. N., Vavilova, L. S., Tarasov, I. S.
Format: Artikel
Sprache:eng
Schlagworte:
Alloys
Composition
Diffraction patterns
Domains
Gallium indium phosphide
Heterostructures
Interfaces
Magnetic Materials
Magnetism
Optical properties
Photoluminescence
Physics
Physics and Astronomy
Quaternary alloys
Semiconductor Structures
Spinodal decomposition
Surfaces
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Zusammenfassung:Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga x In 1 − x As y P 1 − y quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an additional long-wavelength band appears in the photoluminescence spectra, and an additional doublet of the line appears in X-ray diffraction patterns of the (006) line. The domain composition was determined on the basis of Vegard’s law and the Kouphal equation.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608090121