Electrical properties of undoped high-resistivity n-CdTe polycrystals
Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only part...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2007-06, Vol.41 (6), p.651-654 |
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| container_issue | 6 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Klevkov, Yu. V. Kolosov, S. A. Plotnikov, A. F. |
| description | Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only partly be understood in terms of the commonly accepted concepts. |
| doi_str_mv | 10.1134/S1063782607060061 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2664867554</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2664867554</sourcerecordid><originalsourceid>FETCH-LOGICAL-c273t-ecbbcb860fb9f5780d5823a160c65427e032a39bea2dacad53784a4c4aac0ab83</originalsourceid><addsrcrecordid>eNplUE1LxDAUDKLguvoDvBU8R1--06OU-gELHlzPJU1TN0tta5IK_fe2rDdP8x5vmDczCN0SuCeE8Yd3ApIpTSUokACSnKENgRyw5Co_X2fJ8Hq_RFcxHgEI0YJvUFl2zqbgremyMQyjC8m7mA1tNvXNsjbZwX8ecHDRx-R_fJqzHhfN3mXj0M02zDGZLl6ji3YBd_OHW_TxVO6LF7x7e34tHnfYUsUSdrauba0ltHXeCqWhEZoyQyRYKThVDhg1LK-doY2xphFLIm645cZYMLVmW3R30l2sfk8upuo4TKFfXlZUSq6lEoIvLHJi2TDEGFxbjcF_mTBXBKq1repfW-wXPihdag</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2664867554</pqid></control><display><type>article</type><title>Electrical properties of undoped high-resistivity n-CdTe polycrystals</title><source>SpringerLink Journals - AutoHoldings</source><creator>Klevkov, Yu. V. ; Kolosov, S. A. ; Plotnikov, A. F.</creator><creatorcontrib>Klevkov, Yu. V. ; Kolosov, S. A. ; Plotnikov, A. F.</creatorcontrib><description>Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only partly be understood in terms of the commonly accepted concepts.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782607060061</identifier><language>eng</language><publisher>New York: Springer Nature B.V</publisher><subject>Electrical properties ; Electrical resistivity ; Photoconductivity ; Polycrystals ; Transport properties</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2007-06, Vol.41 (6), p.651-654</ispartof><rights>Pleiades Publishing, Ltd. 2007.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c273t-ecbbcb860fb9f5780d5823a160c65427e032a39bea2dacad53784a4c4aac0ab83</citedby><cites>FETCH-LOGICAL-c273t-ecbbcb860fb9f5780d5823a160c65427e032a39bea2dacad53784a4c4aac0ab83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Klevkov, Yu. V.</creatorcontrib><creatorcontrib>Kolosov, S. A.</creatorcontrib><creatorcontrib>Plotnikov, A. F.</creatorcontrib><title>Electrical properties of undoped high-resistivity n-CdTe polycrystals</title><title>Semiconductors (Woodbury, N.Y.)</title><description>Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only partly be understood in terms of the commonly accepted concepts.</description><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Photoconductivity</subject><subject>Polycrystals</subject><subject>Transport properties</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNplUE1LxDAUDKLguvoDvBU8R1--06OU-gELHlzPJU1TN0tta5IK_fe2rDdP8x5vmDczCN0SuCeE8Yd3ApIpTSUokACSnKENgRyw5Co_X2fJ8Hq_RFcxHgEI0YJvUFl2zqbgremyMQyjC8m7mA1tNvXNsjbZwX8ecHDRx-R_fJqzHhfN3mXj0M02zDGZLl6ji3YBd_OHW_TxVO6LF7x7e34tHnfYUsUSdrauba0ltHXeCqWhEZoyQyRYKThVDhg1LK-doY2xphFLIm645cZYMLVmW3R30l2sfk8upuo4TKFfXlZUSq6lEoIvLHJi2TDEGFxbjcF_mTBXBKq1repfW-wXPihdag</recordid><startdate>20070601</startdate><enddate>20070601</enddate><creator>Klevkov, Yu. V.</creator><creator>Kolosov, S. A.</creator><creator>Plotnikov, A. F.</creator><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070601</creationdate><title>Electrical properties of undoped high-resistivity n-CdTe polycrystals</title><author>Klevkov, Yu. V. ; Kolosov, S. A. ; Plotnikov, A. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c273t-ecbbcb860fb9f5780d5823a160c65427e032a39bea2dacad53784a4c4aac0ab83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Photoconductivity</topic><topic>Polycrystals</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klevkov, Yu. V.</creatorcontrib><creatorcontrib>Kolosov, S. A.</creatorcontrib><creatorcontrib>Plotnikov, A. F.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klevkov, Yu. V.</au><au>Kolosov, S. A.</au><au>Plotnikov, A. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of undoped high-resistivity n-CdTe polycrystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2007-06-01</date><risdate>2007</risdate><volume>41</volume><issue>6</issue><spage>651</spage><epage>654</epage><pages>651-654</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only partly be understood in terms of the commonly accepted concepts.</abstract><cop>New York</cop><pub>Springer Nature B.V</pub><doi>10.1134/S1063782607060061</doi><tpages>4</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2007-06, Vol.41 (6), p.651-654 |
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| language | eng |
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| subjects | Electrical properties Electrical resistivity Photoconductivity Polycrystals Transport properties |
| title | Electrical properties of undoped high-resistivity n-CdTe polycrystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T02%3A02%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20properties%20of%20undoped%20high-resistivity%20n-CdTe%20polycrystals&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Klevkov,%20Yu.%20V.&rft.date=2007-06-01&rft.volume=41&rft.issue=6&rft.spage=651&rft.epage=654&rft.pages=651-654&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782607060061&rft_dat=%3Cproquest_cross%3E2664867554%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2664867554&rft_id=info:pmid/&rfr_iscdi=true |