Electrical properties of undoped high-resistivity n-CdTe polycrystals

Electrical properties of undoped high-resistivity n-CdTe polycrystals

Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only part...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-06, Vol.41 (6), p.651-654
Hauptverfasser: Klevkov, Yu. V., Kolosov, S. A., Plotnikov, A. F.
Format: Artikel
Sprache:eng
Schlagworte:
Electrical properties
Electrical resistivity
Photoconductivity
Polycrystals
Transport properties
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Zusammenfassung:Transport properties of undoped high-resistivity n-CdTe polycrystals grown by a new technique have been studied. Characteristic features of the temperature dependences of conductivity, photoconductivity, and carrier drift in these polycrystals have been determined. The results obtained can only partly be understood in terms of the commonly accepted concepts.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607060061