Effect of surface excitations on the reflection electron energy loss spectrum in silicon

The results of investigating the relative contribution of surface excitations to the reflection electron energy loss spectrum in pure silicon are presented. The primary electron energy is in the range 60–1000eV. Good agreement is obtained between the experimental values of the surface parameter PS a...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2007-06, Vol.1 (3), p.323-327
Hauptverfasser:	Parshin, A. S., Aleksandrova, G. A., Zyuganova, A. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrons Energy dissipation Excitation Silicon
Online-Zugang:	Volltext
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