Effect of surface excitations on the reflection electron energy loss spectrum in silicon

Effect of surface excitations on the reflection electron energy loss spectrum in silicon

The results of investigating the relative contribution of surface excitations to the reflection electron energy loss spectrum in pure silicon are presented. The primary electron energy is in the range 60–1000eV. Good agreement is obtained between the experimental values of the surface parameter PS a...

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Veröffentlicht in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2007-06, Vol.1 (3), p.323-327
Hauptverfasser: Parshin, A. S., Aleksandrova, G. A., Zyuganova, A. V.
Format: Artikel
Sprache:eng
Schlagworte:
Electrons
Energy dissipation
Excitation
Silicon
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Zusammenfassung:The results of investigating the relative contribution of surface excitations to the reflection electron energy loss spectrum in pure silicon are presented. The primary electron energy is in the range 60–1000eV. Good agreement is obtained between the experimental values of the surface parameter PS and theoretical calculations. The relative contribution of surface excitations is also determined by decomposing the integral reflection electron energy loss spectra into Gaussian curves.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451007030172