Critical behavior of transport and magnetotransport in a 2D electron system in Si near the metal-insulator transition

Magnetoresistance is studied in a strongly correlated 2D electron system in Si in the critical regime in the close vicinity of the 2D metal-insulator transition. Our data are self-consistently compared with solutions of two equations of the crossover renormalization group theory, which describes temperature evolutions of the resistivity and interaction parameters for 2D electron systems. Good agreement is found between the ρ(T, B∥) data and the renormalization group theory in a wide range of the in-plane fields, 0–2.1 T. This agreement supports the interpretation of the observed 2D MIT as the true quantum phase transition.