Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium
Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was...
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Veröffentlicht in: | Journal of electronic materials 1999-07, Vol.28 (7), p.916-925 |
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creator | Stockman, S. A. Huang, J. -W. Osentowski, T. D. Chui, H. C. Peanasky, M. J. Maranowski, S. A. Grillot, P. N. Moll, A. J. Chen, C. H. Kuo, C. P. Liang, B. W. |
description | Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors. |
doi_str_mv | 10.1007/s11664-999-0220-x |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2664697517</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2664697517</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1187-a094ed31b2a4d1f30ff7749f0a40e4dbfb2cd6ac652e8aa8c72b7ec3f40d25f43</originalsourceid><addsrcrecordid>eNot0E1LAzEQBuAgCtbqD_AW8Go0k2ST3WMpfkGlPSh4C9l81JR2d0222P57t6ynYZiXd-BB6BboA1CqHjOAlIJUVUUoY5QcztAECsEJlPLrHE0ol0AKxotLdJXzhlIooIQJel8ejmvf4NjYNnVtMn1sTxuebbfN6h6bxuHYZ-xD8LbHw21F-mPnsWu72Kzxb-y_8c6sG5_jfneNLoLZZn_zP6fo8_npY_5KFsuXt_lsQSxAqYihlfCOQ82McBA4DUEpUQVqBPXC1aFm1kljZcF8aUxpFauVtzwI6lgRBJ-iu7G3S-3P3udeb9p9aoaXmg0MslIFqCEFY8qmNufkg-5S3Jl01ED1SU2PanpQ0yc1feB_IgpgfA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2664697517</pqid></control><display><type>article</type><title>Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium</title><source>Springer Nature - Complete Springer Journals</source><creator>Stockman, S. A. ; Huang, J. -W. ; Osentowski, T. D. ; Chui, H. C. ; Peanasky, M. J. ; Maranowski, S. A. ; Grillot, P. N. ; Moll, A. J. ; Chen, C. H. ; Kuo, C. P. ; Liang, B. W.</creator><creatorcontrib>Stockman, S. A. ; Huang, J. -W. ; Osentowski, T. D. ; Chui, H. C. ; Peanasky, M. J. ; Maranowski, S. A. ; Grillot, P. N. ; Moll, A. J. ; Chen, C. H. ; Kuo, C. P. ; Liang, B. W.</creatorcontrib><description>Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-999-0220-x</identifier><language>eng</language><publisher>Warrendale: Springer Nature B.V</publisher><subject>Incorporation ; Magnesium ; Metalorganic chemical vapor deposition ; Oxygen atoms ; Temperature dependence</subject><ispartof>Journal of electronic materials, 1999-07, Vol.28 (7), p.916-925</ispartof><rights>TMS-The Minerals, Metals and Materials Society 1999.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1187-a094ed31b2a4d1f30ff7749f0a40e4dbfb2cd6ac652e8aa8c72b7ec3f40d25f43</citedby><cites>FETCH-LOGICAL-c1187-a094ed31b2a4d1f30ff7749f0a40e4dbfb2cd6ac652e8aa8c72b7ec3f40d25f43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Stockman, S. A.</creatorcontrib><creatorcontrib>Huang, J. -W.</creatorcontrib><creatorcontrib>Osentowski, T. D.</creatorcontrib><creatorcontrib>Chui, H. C.</creatorcontrib><creatorcontrib>Peanasky, M. J.</creatorcontrib><creatorcontrib>Maranowski, S. A.</creatorcontrib><creatorcontrib>Grillot, P. N.</creatorcontrib><creatorcontrib>Moll, A. J.</creatorcontrib><creatorcontrib>Chen, C. H.</creatorcontrib><creatorcontrib>Kuo, C. P.</creatorcontrib><creatorcontrib>Liang, B. W.</creatorcontrib><title>Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium</title><title>Journal of electronic materials</title><description>Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.</description><subject>Incorporation</subject><subject>Magnesium</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Oxygen atoms</subject><subject>Temperature dependence</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNot0E1LAzEQBuAgCtbqD_AW8Go0k2ST3WMpfkGlPSh4C9l81JR2d0222P57t6ynYZiXd-BB6BboA1CqHjOAlIJUVUUoY5QcztAECsEJlPLrHE0ol0AKxotLdJXzhlIooIQJel8ejmvf4NjYNnVtMn1sTxuebbfN6h6bxuHYZ-xD8LbHw21F-mPnsWu72Kzxb-y_8c6sG5_jfneNLoLZZn_zP6fo8_npY_5KFsuXt_lsQSxAqYihlfCOQ82McBA4DUEpUQVqBPXC1aFm1kljZcF8aUxpFauVtzwI6lgRBJ-iu7G3S-3P3udeb9p9aoaXmg0MslIFqCEFY8qmNufkg-5S3Jl01ED1SU2PanpQ0yc1feB_IgpgfA</recordid><startdate>199907</startdate><enddate>199907</enddate><creator>Stockman, S. A.</creator><creator>Huang, J. -W.</creator><creator>Osentowski, T. D.</creator><creator>Chui, H. C.</creator><creator>Peanasky, M. J.</creator><creator>Maranowski, S. A.</creator><creator>Grillot, P. N.</creator><creator>Moll, A. J.</creator><creator>Chen, C. H.</creator><creator>Kuo, C. P.</creator><creator>Liang, B. W.</creator><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>199907</creationdate><title>Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium</title><author>Stockman, S. A. ; Huang, J. -W. ; Osentowski, T. D. ; Chui, H. C. ; Peanasky, M. J. ; Maranowski, S. A. ; Grillot, P. N. ; Moll, A. J. ; Chen, C. H. ; Kuo, C. P. ; Liang, B. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1187-a094ed31b2a4d1f30ff7749f0a40e4dbfb2cd6ac652e8aa8c72b7ec3f40d25f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Incorporation</topic><topic>Magnesium</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Oxygen atoms</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stockman, S. A.</creatorcontrib><creatorcontrib>Huang, J. -W.</creatorcontrib><creatorcontrib>Osentowski, T. D.</creatorcontrib><creatorcontrib>Chui, H. C.</creatorcontrib><creatorcontrib>Peanasky, M. J.</creatorcontrib><creatorcontrib>Maranowski, S. A.</creatorcontrib><creatorcontrib>Grillot, P. N.</creatorcontrib><creatorcontrib>Moll, A. J.</creatorcontrib><creatorcontrib>Chen, C. H.</creatorcontrib><creatorcontrib>Kuo, C. P.</creatorcontrib><creatorcontrib>Liang, B. W.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Stockman, S. A.</au><au>Huang, J. -W.</au><au>Osentowski, T. D.</au><au>Chui, H. C.</au><au>Peanasky, M. J.</au><au>Maranowski, S. A.</au><au>Grillot, P. N.</au><au>Moll, A. J.</au><au>Chen, C. H.</au><au>Kuo, C. P.</au><au>Liang, B. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium</atitle><jtitle>Journal of electronic materials</jtitle><date>1999-07</date><risdate>1999</risdate><volume>28</volume><issue>7</issue><spage>916</spage><epage>925</epage><pages>916-925</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.</abstract><cop>Warrendale</cop><pub>Springer Nature B.V</pub><doi>10.1007/s11664-999-0220-x</doi><tpages>10</tpages></addata></record> |
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subjects | Incorporation Magnesium Metalorganic chemical vapor deposition Oxygen atoms Temperature dependence |
title | Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium |
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