Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium

Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was...

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Veröffentlicht in:Journal of electronic materials 1999-07, Vol.28 (7), p.916-925
Hauptverfasser: Stockman, S. A., Huang, J. -W., Osentowski, T. D., Chui, H. C., Peanasky, M. J., Maranowski, S. A., Grillot, P. N., Moll, A. J., Chen, C. H., Kuo, C. P., Liang, B. W.
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Sprache:eng
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Zusammenfassung:Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-999-0220-x