Tunable electronically anisotropic materials with ion-irradiated polysilanes on semiconductor
Studies on tunable electronically anisotropic material on semiconductor, “TEAMS”, with a polysilane layer spin-coated onto a silicon wafer and then contacted on both top and rear sides, are reported in the present paper. This structure was irradiated with swift heavy ions, and its electrical charact...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2007-03, Vol.86 (4), p.469-476 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | FINK, D CHANDRA, A OPITZ-COUTUREAU, J FAHRNER, W. R HOPPE, K PAPALEO, R. M |
| description | Studies on tunable electronically anisotropic material on semiconductor, “TEAMS”, with a polysilane layer spin-coated onto a silicon wafer and then contacted on both top and rear sides, are reported in the present paper. This structure was irradiated with swift heavy ions, and its electrical characteristics were studied both during and after irradiation. It was found that the current/voltage characteristics depend on the ion fluence, the time of voltage application, the gating voltage, the ambient pressure, light, and the post-annealing temperature of the samples. Under specific conditions, a negative differential resistance was also exhibited. The observations are indicative of a peculiar conduction mechanism. |
| doi_str_mv | 10.1007/s00339-006-3777-8 |
| format | Article |
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A, Materials science & processing</jtitle><date>2007-03-01</date><risdate>2007</risdate><volume>86</volume><issue>4</issue><spage>469</spage><epage>476</epage><pages>469-476</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Studies on tunable electronically anisotropic material on semiconductor, “TEAMS”, with a polysilane layer spin-coated onto a silicon wafer and then contacted on both top and rear sides, are reported in the present paper. This structure was irradiated with swift heavy ions, and its electrical characteristics were studied both during and after irradiation. It was found that the current/voltage characteristics depend on the ion fluence, the time of voltage application, the gating voltage, the ambient pressure, light, and the post-annealing temperature of the samples. Under specific conditions, a negative differential resistance was also exhibited. 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| ispartof | Applied physics. A, Materials science & processing, 2007-03, Vol.86 (4), p.469-476 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Applied physics Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electric potential Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Fluence Heavy ions Irradiation Materials science Physics Polymers and organic compounds Polysilanes Pressure Radiation effects on specific materials Silicon wafers Spin coating Structure of solids and liquids crystallography Voltage |
| title | Tunable electronically anisotropic materials with ion-irradiated polysilanes on semiconductor |
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