Tunable electronically anisotropic materials with ion-irradiated polysilanes on semiconductor

Studies on tunable electronically anisotropic material on semiconductor, “TEAMS”, with a polysilane layer spin-coated onto a silicon wafer and then contacted on both top and rear sides, are reported in the present paper. This structure was irradiated with swift heavy ions, and its electrical characteristics were studied both during and after irradiation. It was found that the current/voltage characteristics depend on the ion fluence, the time of voltage application, the gating voltage, the ambient pressure, light, and the post-annealing temperature of the samples. Under specific conditions, a negative differential resistance was also exhibited. The observations are indicative of a peculiar conduction mechanism.