The effect of dislocations formed during growth on the structure and photoluminescence of i-n −-n-n +-GaAs epilayers and on the related microwave transistors parameters

The structure of two types of GaAs i-n−-n-n+ epilayers on GaAs〈100〉 semi-insulating substrates was studied by electron microscopy. The low-temperature photoluminescence spectra were measured and their special features were analyzed. It is shown that the formation of dislocations during growth in such structures significantly affects the photoluminescence spectra and impairs the parameters of microwave field-effect transistors based on these structures.