HgS nanoparticles : Structure and optical properties
Nanocrystalline HgS thin films were synthesized by using an electrochemical route under galvanostatic conditions. Quantum size effects have resulted in the change of the semi-metallic behavior of bulk β-HgS (Eg=-0.5 eV) to semiconducting behavior with an absorption onset around 1.4 eV as confirmed f...
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Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2007-03, Vol.86 (4), p.447-450 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Nanocrystalline HgS thin films were synthesized by using an electrochemical route under galvanostatic conditions. Quantum size effects have resulted in the change of the semi-metallic behavior of bulk β-HgS (Eg=-0.5 eV) to semiconducting behavior with an absorption onset around 1.4 eV as confirmed from optical absorption studies. Glancing angle X-ray diffraction analysis confirms the presence of β-HgS (zinc-blend structure) with prominent crystallographic planes of (200), (220) and (311) in the deposit. This is consistent with results obtained from transmission electron diffraction studies. The Raman scattering measurements identified a broad 1LO confined phonon mode at 247 cm-1 which suggests that the crystalline sizes are small. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-006-3812-9 |