HgS nanoparticles : Structure and optical properties

Nanocrystalline HgS thin films were synthesized by using an electrochemical route under galvanostatic conditions. Quantum size effects have resulted in the change of the semi-metallic behavior of bulk β-HgS (Eg=-0.5 eV) to semiconducting behavior with an absorption onset around 1.4 eV as confirmed f...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2007-03, Vol.86 (4), p.447-450
Hauptverfasser: PATEL, B. K, RATH, S, SARANGI, S. N, SAHU, S. N
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Sprache:eng
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Zusammenfassung:Nanocrystalline HgS thin films were synthesized by using an electrochemical route under galvanostatic conditions. Quantum size effects have resulted in the change of the semi-metallic behavior of bulk β-HgS (Eg=-0.5 eV) to semiconducting behavior with an absorption onset around 1.4 eV as confirmed from optical absorption studies. Glancing angle X-ray diffraction analysis confirms the presence of β-HgS (zinc-blend structure) with prominent crystallographic planes of (200), (220) and (311) in the deposit. This is consistent with results obtained from transmission electron diffraction studies. The Raman scattering measurements identified a broad 1LO confined phonon mode at 247 cm-1 which suggests that the crystalline sizes are small.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-006-3812-9