Transport properties of the LaSrNiO4 ± δ ceramics

Transport properties of the LaSrNiO4 ± δ ceramics

The temperature dependence of electrical resistivity in LaSrNiO4 ± δ ceramics synthesized using various techniques and subjected to heat treatment is studied. The occurrence of a metal-semiconductor transition is shown to be accounted for by the Anderson carrier localization originating from the ran...

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Veröffentlicht in:Physics of the solid state 2002-09, Vol.44 (9), p.1622-1627
Hauptverfasser: Ivanova, T. A., Jacyna-Onyszkiewicz, I., Yablokov, Yu. V.
Format: Artikel
Sprache:eng
Schlagworte:
Ceramics
Heat treatment
Metal/semiconductor transitions
Temperature dependence
Transport properties
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Zusammenfassung:The temperature dependence of electrical resistivity in LaSrNiO4 ± δ ceramics synthesized using various techniques and subjected to heat treatment is studied. The occurrence of a metal-semiconductor transition is shown to be accounted for by the Anderson carrier localization originating from the random arrangement of oxygen vacancies.
ISSN:1063-7834
1090-6460
DOI:10.1134/1.1507234