GaN Laser Diode Technology for Visible-Light Communications

Gallium nitride (GaN) laser diodes (LDs) are considered for visible light communications (VLC) in free space, underwater, and in plastic optical fibers (POFs). A review of recent results is presented, showing high-frequency operation of AlGaInN laser diodes with data transmission rates up to 2.5 Gbi...

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Veröffentlicht in:Electronics (Basel) 2022-05, Vol.11 (9), p.1430
Hauptverfasser: Najda, Stephen P., Perlin, Piotr, Suski, Tadek, Marona, Lucja, Leszczyński, Mike, Wisniewski, Przemek, Stanczyk, Szymon, Schiavon, Dario, Slight, Thomas, Watson, Malcolm A., Gwyn, Steffan, Kelly, Anthony E., Watson, Scott
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Sprache:eng
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Zusammenfassung:Gallium nitride (GaN) laser diodes (LDs) are considered for visible light communications (VLC) in free space, underwater, and in plastic optical fibers (POFs). A review of recent results is presented, showing high-frequency operation of AlGaInN laser diodes with data transmission rates up to 2.5 Gbit/s in free space and underwater and high bandwidths of up to 1.38 GHz through 10 m of plastic optical fiber. Distributed feedback (DFB) GaN LDs are fabricated to achieve single-frequency operation. We report on single-wavelength emissions of GaN DFB LDs with a side-mode suppression ratio (SMSR) in excess of 35 dB.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics11091430