Suppressed dielectric loss and enhanced breakdown strength in Ni/PVDF composites through constructing Al2O3 shell as an interlayer
Developing polymer dielectrics with a low dielectric loss but high dielectric permittivity ( ε ′) and breakdown strength ( E b ) is constantly pursued for applications in microelectronics and electrical industries. In this work, nickel (Ni) powders were coated by a layer of insulating aluminum oxide...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2022-05, Vol.33 (13), p.9951-9965 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Developing polymer dielectrics with a low dielectric loss but high dielectric permittivity (
ε
′) and breakdown strength (
E
b
) is constantly pursued for applications in microelectronics and electrical industries. In this work, nickel (Ni) powders were coated by a layer of insulating aluminum oxide (Al
2
O
3
) via a facile sol–gel process, and the obtained core–shell Ni@Al
2
O
3
particles were admixed into poly(vinylidene fluoride) (PVDF) to study the impacts of the Al
2
O
3
shell and its thickness on dielectric properties of the composites. The results verify the formation of the insulating Al
2
O
3
layer on the surface of the Ni core, which obviously enhances interfacial compatibility and interactions between the matrix and the fillers. The Ni@Al
2
O
3
/PVDF composites show better dielectric performances compared with the pristine Ni/PVDF. The dramatically suppressed dielectric loss and conductivity can be attributed to the insulating Al
2
O
3
interlayer avoiding the Ni cores from direct contact with each other and blocking the long-range migration of electrons. Furthermore, the Al
2
O
3
shell serves as an interlayer which lessens the distortion and concentration of local electric field subsequently leading to enhanced
E
b
. Thus, the dielectric properties of the Ni@Al
2
O
3
/PVDF composites can be effectively tuned through finely tailoring the Al
2
O
3
shell’s thickness. The developed Ni@Al
2
O
3
/PVDF composites with high
E
b
and
ε
′ but low dielectric loss have potential applications in the microelectronic and electrical industries. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-022-07987-3 |