Identifying dominant recombination locations in double‐graded Cu(In1‐xGax)(Se1‐ySy)2 solar cells and their impact on the performance at different light intensities

In this work, the impact of different Cu(In1‐xGax)(Se1‐ySy)2 solar cell structures on the shift of the dominant recombination region at varying light intensities was investigated. A new parameter was proposed to account for the dominant recombination region relative to the minimum band gap location in a graded absorber. Additionally, the influence of shunt resistances on the dominant recombination location for different CIGSSe solar cell structures was modeled. Within the investigated illumination range, correlations between the dominant recombination location and solar cell parameters as well as their temperature dependence were discussed. A method to determine the dominant recombination location in graded CIGSSe solar cells is proposed. Studies were made on solar cells with different layer configurations. The implementation of an i‐layer showed a strong fill factor resilience over the studied light regime. In cells with thicker absorbers, the low‐light temperature coefficients showed better values in comparison with high light.