Seebeck and Nernst effects in topological insulator: The case of strained HgTe

We theoretically study the thermoelectric transport properties of strained HgTe in the topological insulator phase. We developed a model for the system using a Dirac Hamiltonian including the effect of strain induced by the interface between HgTe and the CdTe substrate. The conductivity tensor was explored assuming the electrons are scattered by charge impurities, while the thermopower tensor was addressed using the Mott relation. Seebeck and Nernst responses exhibit remarkable enhancements in comparison with other two-dimensional Dirac materials, such as graphene, germanane, prosphorene and stanene. The intensity of these thermometric responses, their dependencies with the external perpendicular magnetic field and temperature are also addressed. •Collisional and Hall conductivity to enrich the discussion of thermoelectric coefficients.•Analytical Nernst and Seebeck coefficients in the Mott approximation for a 3D HgTe topological insulator under strain.•Maxima and minima of the enhanced Seebeck coefficient modulated by strain, temperature and magnetic field.