Graphene/AlGaN Schottky barrier photodiodes and its application for array devices

Graphene/AlGaN Schottky barrier photodiodes and its application for array devices

This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light-absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al composition...

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Veröffentlicht in:Japanese Journal of Applied Physics 2022-06, Vol.61 (SD), p.SD1013
Hauptverfasser: Nakagawa, Yoshinori, Okauchi, Shigeki, Sano, Masahiko, Mukai, Takashi, Ohno, Yasuhide, Nagase, Masao
Format: Artikel
Sprache:eng
Schlagworte:
AlGaN
Arrays
deep ultraviolet
Electromagnetic absorption
Graphene
image sensor
Photodiodes
Schottky barrier
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Zusammenfassung:This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light-absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al composition ratio. By forming an array of photodiodes, an 8 × 8 pixels ultraviolet image sensor was fabricated.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac6132