STT-MRAM-Based Multicontext FPGA for Multithreading Computing Environment
The demand for high-performance computing and rapidly increasing power consumption has increased the necessity for application-specific accelerators. In the datacenter and mobile system, more applications are increasingly relying on accelerators. Field-programmable gate arrays (FPGAs) emerge as a go...
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Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 2022-05, Vol.41 (5), p.1330-1343 |
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Sprache: | eng |
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Zusammenfassung: | The demand for high-performance computing and rapidly increasing power consumption has increased the necessity for application-specific accelerators. In the datacenter and mobile system, more applications are increasingly relying on accelerators. Field-programmable gate arrays (FPGAs) emerge as a good candidate because they have high programmability and power efficiency. As the number of applications requiring acceleration increases, there is huge demand for FPGAs that support multiple contexts. Previous FPGA designs that support multicontext have various shortcomings such as volatility, poor power efficiency, large performance, area, and reconfiguration overhead. In this article, we propose a spin-transfer torque magnetic RAM (STT-MRAM)-based nonvolatile multicontext FPGA (NVMC-FPGA) that overcomes these shortcomings. We introduce the NVMC-FPGA architecture and operation modes that take advantage of nonvolatility and support multicontext. We also develop the multicontext-aware FPGA computer aided design flow to make the most of the NVMC-FPGA. Compared to the conventional SRAM-based FPGA, when eight identical circuits are mapped, the NVMC-FPGA improves the performance by 15.3% on average and reduces the power consumption by 11.2%-80.7%, depending on the number of simultaneously activated circuits. Moreover, when eight different circuits are mapped, the NVMC-FPGA improves the performance by 58.5% on average and reduces the power consumption by 6.2%-63.3%, depending on the number of simultaneously activated circuits. |
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ISSN: | 0278-0070 1937-4151 |
DOI: | 10.1109/TCAD.2021.3091440 |