Conditional radiation tolerance of ferroelectric Hf0.5Zr0.5O2 thin film under 60Co gamma-ray irradiation

We report the effect of 60Co gamma-ray irradiation on the ferroelectric properties of metal–ferroelectric Hf0.5Zr0.5O2–metal thin film structures. The pristine Hf0.5Zr0.5O2 films showed strong radiation tolerance against gamma-rays with stable remanant polarization values. When Hf0.5Zr0.5O2 films we...

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Veröffentlicht in:Applied physics letters 2022-04, Vol.120 (16)
Hauptverfasser: Namkung, Jin, Song, Myeong Seop, Lee, Kyu Cheol, Lee, Kyoungjun, Cho, Jung Woo, Chae, Seung Chul
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Sprache:eng
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Zusammenfassung:We report the effect of 60Co gamma-ray irradiation on the ferroelectric properties of metal–ferroelectric Hf0.5Zr0.5O2–metal thin film structures. The pristine Hf0.5Zr0.5O2 films showed strong radiation tolerance against gamma-rays with stable remanant polarization values. When Hf0.5Zr0.5O2 films were exposed to electric field cycling, or “wake-up” process, prior to irradiation, however, their ferroelectricity demonstrated a clear degradation of remanant polarization and coercive voltage shift of the hysteresis curves. The analysis of ferroelectric switching dynamics revealed faster polarization switching with broadening of Lorentzian distribution of characteristic switching time for higher radiation doses, which is contrary to the wake-up behavior. The relationship between the wake-up process and gamma-ray irradiation on the stability of ferroelectric Hf0.5Zr0.5O2 films was discussed in light of domain alignment and defect mechanisms, considering both the redistribution and trapping of defect charges.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0087315