Analytical modeling of dielectrically modulated broken-gate tunnel FET biosensor considering partial hybridization effect

•Novel analytical model for dielectrically modulated broken gate TFET based bio-sensor.•Reduced ambipolarity and optimum sensitivity in case of broken gate structure.•Steric hindrance effect has been incorporated with rectangular and slant cavity fill profiles.•Sensitivity analysis with respect to fill factor and cavity dimensions for medical and industrial grade biomolecules. Currently Tunnel Field Effect Transistors (TFET) have picked up tremendous recognition in bio-sensing applications. Having a similar perspective, this paper proposes a preliminary novel channel centre potential based analytical model for broken gate TFET biosensor device. The model incorporates dielectric modulation and steric hindrance effects and demonstrates the effect of device parameter variations and partial hybridization in the nano-cavity on the sensitivity of the bio-sensor. Two types of fill profiles have been examined for sensitivity variation. The model shows good agreement with the real time TCAD simulation data and existing literature. Also, the model proves its robustness by responding in conditions of low channel occupancy (∼40%) and for biomolecules ranging from medical to industrial grade (high-K). The model is computationally intuitive and provides scope for application specific optimizations. The broken structure helps in reducing the ambipolarity without adversely affecting the sensitivity of the biosensor. [Display omitted] .