The diode and photodiode performances of BaZrO3 perovskite-based device under the influence of thermal and light external stimuli

One of the most important outputs of a prepared material is the application areas in which it can be used. In this context, in this study, the idea of how a diode produced by using the prepared BaZrO3 perovskite would behave under the influence of different physical external stimuli was taken into action, thus, the Al/BaZrO3/Si heterojunction was produced. The metallic contacts and BaZrO3 thin film interfacial layer used in the fabricated device were coated by thermal evaporation technique. It has been understood from the taken AFM images and the analyzes made on these images that one of the best methods that can be used for such devices, where the parameters such as roughness and homogeneity of the material used in the interface are of great importance, is the thermal evaporation technique. In addition, the generated device was examined in detail with SEM and XRD analyzes to reveal the morphological and structural features. Apart from the structural properties, the electrical properties of the device were examined under the influence of temperature and light stimuli, and the changes in the behavior of the device were analyzed. The performed current-voltage measurements under different light sources showed that the device was sensitive to light, and temperature-dependent measurements also showed that the device could be used in applications in a wide temperature range. Some prominent diode parameters such as series resistance, barrier height and ideality factor value of the device were computed by the usage of Norde and thermionic emission approaches, and the relevant parameter values were acquired as 5.32 kΩ, 0.55 eV and 1.77, respectively. In addition to these, the conductivity and capacitance measurements were performed depending on the changing frequency and application voltage, and electrical parameters such as donor concentration (Nd), fermi level (EF), maximum electric field (Em) and barrier height (ΦB) were computed in the light of the obtained data. The obtained outcomes proved that the produced device and the utilized BaZrO3 perovskite material could be used in photovoltaic and electronic applications. [Display omitted] •The Al/p-Si Schottky diode was fabricated by using BaZrO3 perovskite interlayer by using the thermal evaporation technique.•The structural, morphological, and electrical analyses of prepared BaZrO3 material were performed.•The fabricated device is very sensitive to light and temperature.•The fabricated device is strongly dependen