In situ growth of highly dispersed Ni2P quantum dots on nitrogen-vacancy g-C3N4 nanosheets for high-efficient photocatalytic hydrogen evolution

Herein, in situ phosphorization process was applied for preparing Ni 2 P quantum dots (QDs) modified nitrogen-vacancy g-C 3 N 4 sheets (Ni 2 P-NCN). It was found that Ni 2 P QDs with the size of 4–6 nm highly loaded on NCN surface; moreover, the N–Ni bond was formed, photoinduced electrons are easy...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2022-04, Vol.33 (12), p.9764-9773
Hauptverfasser: Zhang, Shuo, Shi, Lei, Yao, Lizhu
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Sprache:eng
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