In situ growth of highly dispersed Ni2P quantum dots on nitrogen-vacancy g-C3N4 nanosheets for high-efficient photocatalytic hydrogen evolution

Herein, in situ phosphorization process was applied for preparing Ni 2 P quantum dots (QDs) modified nitrogen-vacancy g-C 3 N 4 sheets (Ni 2 P-NCN). It was found that Ni 2 P QDs with the size of 4–6 nm highly loaded on NCN surface; moreover, the N–Ni bond was formed, photoinduced electrons are easy to transfer from N to Ni 2 P, promoting the effective separation of photoinduced charges. When it is used as a catalyst for water splitting to produce H 2 , hydrogen evolution rate can be up to 2189.22 µmol (h g) −1 , which is obviously superior to NCN and sample prepared by physical mixing phosphorization methods. Furthermore, excellent steady performance could be kept. Evidently, current work provides an effective method for modifying photocatalyst.