Nonlinear Optical Diagnostics of the Crystal Structure of Semiconductor Films in Molecular Beam Epitaxy
The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the structural perfection of semicondu...
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| Veröffentlicht in: | Journal of communications technology & electronics 2022-03, Vol.67 (3), p.324-328 |
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| container_title | Journal of communications technology & electronics |
| container_volume | 67 |
| creator | Kulchitskii, N. A. |
| description | The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the structural perfection of semiconductor films during their synthesis in an MBE device for second harmonic (SH) generation using a repetitively pulsed YAG:Nd laser is presented. |
| doi_str_mv | 10.1134/S106422692203007X |
| format | Article |
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| ispartof | Journal of communications technology & electronics, 2022-03, Vol.67 (3), p.324-328 |
| issn | 1064-2269 1555-6557 |
| language | eng |
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| subjects | Communications Engineering Crystal structure Crystals Engineering Epitaxy Lasers Molecular beam epitaxy Molecular structure Neodymium lasers Networks Nonlinear optics Structure YAG lasers |
| title | Nonlinear Optical Diagnostics of the Crystal Structure of Semiconductor Films in Molecular Beam Epitaxy |
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