Nonlinear Optical Diagnostics of the Crystal Structure of Semiconductor Films in Molecular Beam Epitaxy

Nonlinear Optical Diagnostics of the Crystal Structure of Semiconductor Films in Molecular Beam Epitaxy

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the structural perfection of semicondu...

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Veröffentlicht in:Journal of communications technology & electronics 2022-03, Vol.67 (3), p.324-328
1. Verfasser: Kulchitskii, N. A.
Format: Artikel
Sprache:eng
Schlagworte:
Communications Engineering
Crystal structure
Crystals
Engineering
Epitaxy
Lasers
Molecular beam epitaxy
Molecular structure
Neodymium lasers
Networks
Nonlinear optics
Structure
YAG lasers
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Zusammenfassung:The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the structural perfection of semiconductor films during their synthesis in an MBE device for second harmonic (SH) generation using a repetitively pulsed YAG:Nd laser is presented.
ISSN:1064-2269
1555-6557
DOI:10.1134/S106422692203007X