An insight into the performance analysis of GAA MOSFET for different dielectrics at cryogenic temperatures

•Cylindrical gate GAA MOSFET is designed and simulated to get improved electrostatic controllability.•A temperature variation between 70 K and 800 K has been taken and the corresponding effect on device performance is observed.•The transfer characteristics and output characteristics were observed in...

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Veröffentlicht in:	Cryogenics (Guildford) 2022-03, Vol.122, p.103425, Article 103425
Hauptverfasser:	Mahidhar, Kukumani, Rooban, S., Tayal, Shubham, Jena, Biswajit
Format:	Artikel
Sprache:	eng
Schlagworte:	Cryogenic Cryogenic temperature Field effect transistors Gate-all-around Metal oxide semiconductors MOSFET MOSFETs Semiconductor devices Short channel Subthreshold Temperature Temperature dependence Transconductance
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