An insight into the performance analysis of GAA MOSFET for different dielectrics at cryogenic temperatures

•Cylindrical gate GAA MOSFET is designed and simulated to get improved electrostatic controllability.•A temperature variation between 70 K and 800 K has been taken and the corresponding effect on device performance is observed.•The transfer characteristics and output characteristics were observed in order to get perfect switching ratio.•Further the threshold voltage is extracted using transconductance method and the effect due to temperature variation is analyzed. A 60 nm gate length, n-type Gate all around (GAA) metal oxide semiconductor field effect transistor (MOSFET) is simulated at different temperature. The temperature dependent electrical characteristics for various temperature are investigated extensively. The improved gate controllability in lower technology node as well as immunity against short channel effects are thoroughly examined. This paper also includes the analog performance analysis of GAA MOSFET along with the DC performances. The performance matrix of the device for different temperature ranging from 70 K to 800 K were illustrated clearly. Results exhibit that the drain current, transconductance, device gain and transconductance to drain current ratio (gm/Ids) improves when temperature is decreased.