Structural, electrical, and magnetic studies of Cu2+ substituted MnFe2O4 nanoferrites synthesized via solution combustion technique
The current study focuses on the investigation of the effect of Cu 2+ doping on the structural, optical, magnetic, and dielectric measurements of solution combustion synthesized MnFe 2 O 4 nanoferrites with the use of different characterization techniques. XRD study reveals the creation of spinel cu...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2022-04, Vol.33 (10), p.7528-7542 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The current study focuses on the investigation of the effect of Cu
2+
doping on the structural, optical, magnetic, and dielectric measurements of solution combustion synthesized MnFe
2
O
4
nanoferrites with the use of different characterization techniques. XRD study reveals the creation of spinel cubic structure with no additional phases and from the XRD data, various structural parameters have been determined. For the detailed structural investigation of undoped and doped MnFe
2
O
4
nanoferrites, the cation distribution is derived from the XRD pattern data and magnetization approach. The increment in bond angles (
θ
1
,
θ
2
,
θ
5
), suggests the strengthening of A–B and A–A exchange interactions, whereas a decrement in the bond angles (
θ
3
,
θ
4
) results in the weakening of B–B exchange interactions. In addition, with the rise of Cu
2+
dopants content, an enhancement in the coercivity (26.02–151.35 Oe) and retentivity (0.96–7.89 emu/g) is observed, whereas a decrement in the value of the saturation magnetization (17.71–42.78 emu/g) is found. From the dielectric measurements, with the increase in frequency, the dielectric constant and dielectric loss tangent are observed to decrease. Thus, in this study, comparable better values of saturation magnetization, retentivity, and coercivity are obtained and will result in the use of undoped and doped MnFe
2
O
4
nanoferrites for electromagnets and multilayer chip inductors applications. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-022-07897-4 |