Tuning transport properties for 1D and 2D ψ-Graphene

[Display omitted] •2D and 1D Ψ-Graphene have metallic behavior and semiconductor–metal transition.•1D Ψ-Graphene has better tuning transport properties than 2D Ψ-Graphene.•The hydrogenation on the edges is responsible by tuning transport properties.•1D Ψ-Graphene exhibits Switching and RTD signature while 2D Ψ-Graphene has RTD signature.•1D Ψ-Graphene is highly promising in nanoelectronics applications. In this work, we built two equivalent molecular devices via DFT/NEGF replicating the 2D and 1D ψ-Graphene unit cell composed by C12 and C24H6. Our results exhibit that the hydrogenation at the edge for 1D ψ-Graphene makes energetically stable, more structurally stable and reduces driving on device signature between 0 V and 0.25 V (Switching) and 0.25 V-0.5 V (resonant tunnel diode - RTD) while the 2D device has RTD signature. The density of states and transmission eingenchannels confirm metallic behavior and semiconductor–metal transition for two devices. Thenegative differential resistance (NDR) is identified in the two devices by transition voltage spectroscopy. Our discoveries make the1D ψ-Graphenehighly promising in nanoelectronics applications for tuning transport properties.