Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

Currently, chemical gas deposition is the main method for producing high-quality and reproducible epitaxial layers for commercial silicon carbide (SiC) power devices. Based on the experience of the Electrotechnical University LETI in the synthesis of single-crystalline SiC, an analysis of the current state of silicon carbide gas phase epitaxy (CVD) technology is carried out. It is shown that modern CVD reactors allow growth processes of high-quality SiC epitaxial structures with the following parameters: substrate diameter of up to 200 mm; epitaxial layer thicknesses of 0.1 to 250 μm; and n - and p -type layers with doping levels in the ranges 10 14 –10 19 cm –3 and 10 14 –10 20 cm –3 , respectively. At the same time, setting up the technology of the reproducible high-quality growth of epitaxial layers is an individual task for a particular type of reactor. A detailed consideration of the technological factors presented in this paper is required, which in the end determine the achievable parameters of SiC-epitaxial products.