Prediction of Conditions for Chloride–Hydride Epitaxy of Ga1 – yInyAs1 – xPx Layers Isoperiodic with GaAs and GaAs1 – xPx

For obtaining multicomponent III–V solid solutions, the vapor-phase methods such as the chloride–hydride epitaxy, the epitaxy from organometallic compounds, and the molecular-beam epitaxy are mainly used. The development of optimal technological modes of multicomponent layers and structures, as a rule, requires a lot of time and material costs. In the study, the method of modeling the growth processes of multicomponent solid solutions based on the key physicochemical laws of crystallization of materials and the properties of III–V compounds is proposed. The processes of obtaining four-component In 1 – y Ga y As 1 – x P x solid solutions isoperiodic with GaAs and three-component GaAs 0.8 P 0.2 and GaAs 0.6 P 0.4 solid solutions are analyzed and predicted. The calculated modes are experimentally implemented, and materials are obtained, which correspond to the modern level in quality.