Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions

The electronic properties of n -InP(100) surfaces passivated with various sulfide solutions are studied using photoluminescence and Raman spectroscopy. It is shown that the passivation process leads to an increase in the photoluminescence intensity of the semiconductor, which indicates a decrease in the velocity of nonradiative surface recombination accompanied by a narrowing of the surface space-charge region and an increase in the electron density in the analyzed semiconductor bulk. The efficiency of electronic passivation of the n -InP(100) surface depends on the composition of the sulfide solution.