Specific Features of Structural Stresses in InGaN/GaN Nanowires

An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2021-10, Vol.55 (10), p.795-798
Hauptverfasser:	Soshnikov, I. P., Kotlyar, K. P., Reznik, R. R., Gridchin, V. O., Lendyashova, V. V., Vershinin, A. V., Lysak, V. V., Kirilenko, D. A., Bert, N. A., Cirlin, G. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Epitaxy Gallium nitrides Heterostructures Indium gallium nitrides Magnetic Materials Magnetism Molecular beam epitaxy Nanowires Physics Physics and Astronomy Stresses
Online-Zugang:	Volltext
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