Specific Features of Structural Stresses in InGaN/GaN Nanowires

Specific Features of Structural Stresses in InGaN/GaN Nanowires

An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021-10, Vol.55 (10), p.795-798
Hauptverfasser: Soshnikov, I. P., Kotlyar, K. P., Reznik, R. R., Gridchin, V. O., Lendyashova, V. V., Vershinin, A. V., Lysak, V. V., Kirilenko, D. A., Bert, N. A., Cirlin, G. E.
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxy
Gallium nitrides
Heterostructures
Indium gallium nitrides
Magnetic Materials
Magnetism
Molecular beam epitaxy
Nanowires
Physics
Physics and Astronomy
Stresses
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Zusammenfassung:An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782621090207