Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum...
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Veröffentlicht in: | Applied physics letters 2022-03, Vol.120 (11) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3 ± 0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0085257 |